Infineon Technologies - IPP180N10N3GXKSA1

KEY Part #: K6418620

IPP180N10N3GXKSA1 Pricing (USD) [70849PC Stock]

  • 1 pcs$0.50590
  • 10 pcs$0.44820
  • 100 pcs$0.33523
  • 500 pcs$0.25996
  • 1,000 pcs$0.20524

Nimewo Pati:
IPP180N10N3GXKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 43A TO220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Modil pouvwa chofè, Transistors - JFETs, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Single and Tiristors - SCR ...
Avantaj konpetitif:
We specialize in Infineon Technologies IPP180N10N3GXKSA1 electronic components. IPP180N10N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP180N10N3GXKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP180N10N3GXKSA1 Atribi pwodwi yo

Nimewo Pati : IPP180N10N3GXKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 43A TO220-3
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 18 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 33µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 71W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3