IXYS - IXTA120N075T2

KEY Part #: K6394736

IXTA120N075T2 Pricing (USD) [39583PC Stock]

  • 1 pcs$1.20328
  • 50 pcs$1.19729

Nimewo Pati:
IXTA120N075T2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 75V 120A TO-263.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Diodes - Bridge rèktifikateur and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in IXYS IXTA120N075T2 electronic components. IXTA120N075T2 can be shipped within 24 hours after order. If you have any demands for IXTA120N075T2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTA120N075T2 Atribi pwodwi yo

Nimewo Pati : IXTA120N075T2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 75V 120A TO-263
Seri : TrenchT2™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 75V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 7.7 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4740pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 250W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (IXTA)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB