SCT3080ALGC11 Pricing (USD) [9008PC Stock]
- 1 pcs$5.02839
- 10 pcs$4.52643
- 25 pcs$4.12425
- 100 pcs$3.72184
- 250 pcs$3.42006
- 500 pcs$3.11829
- Nimewo Pati:
- SCT3080ALGC11
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 650V 30A TO247.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor SCT3080ALGC11 electronic components. SCT3080ALGC11 can be shipped within 24 hours after order. If you have any demands for SCT3080ALGC11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT3080ALGC11 Atribi pwodwi yo
Nimewo Pati :
SCT3080ALGC11
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET N-CH 650V 30A TO247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
18V
RD sou (Max) @ Id, Vgs :
104 mOhm @ 10A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 18V
Vgs (Max) :
+22V, -4V
Antre kapasite (Ciss) (Max) @ Vds :
571pF @ 500V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
134W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247N
Pake / Ka :
TO-247-3
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