SI8819EDB-T2-E1 Pricing (USD) [724691PC Stock]
- 1 pcs$0.05104
- Nimewo Pati:
- SI8819EDB-T2-E1
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 12V 2.9A 4-MICROFOOT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SI8819EDB-T2-E1 electronic components. SI8819EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8819EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8819EDB-T2-E1 Atribi pwodwi yo
Nimewo Pati :
SI8819EDB-T2-E1
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 12V 2.9A 4-MICROFOOT
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 3.7V
RD sou (Max) @ Id, Vgs :
80 mOhm @ 1.5A, 3.7V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 8V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
650pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
4-MICRO FOOT® (0.8x0.8)
Pake / Ka :
4-XFBGA
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