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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. ATP216-TL-H

ON Semiconductor - ATP216-TL-H

KEY Part #: K6405766

[1552PC Stock]

    Nimewo Pati:
    ATP216-TL-H
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET N-CH 50V 35A ATPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - Pwogramasyon Unijunction, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - JFETs and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor ATP216-TL-H electronic components. ATP216-TL-H can be shipped within 24 hours after order. If you have any demands for ATP216-TL-H, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ATP216-TL-H Atribi pwodwi yo

    Nimewo Pati : ATP216-TL-H
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET N-CH 50V 35A ATPAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 50V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 35A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
    RD sou (Max) @ Id, Vgs : 23 mOhm @ 18A, 4.5V
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 4.5V
    Vgs (Max) : ±10V
    Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 20V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 40W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : ATPAK
    Pake / Ka : ATPAK (2 leads+tab)

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