IPP051N15N5AKSA1 Pricing (USD) [13436PC Stock]
- 1 pcs$3.06727
- 500 pcs$1.86831
- Nimewo Pati:
- IPP051N15N5AKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MV POWER MOS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPP051N15N5AKSA1 electronic components. IPP051N15N5AKSA1 can be shipped within 24 hours after order. If you have any demands for IPP051N15N5AKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP051N15N5AKSA1 Atribi pwodwi yo
Nimewo Pati :
IPP051N15N5AKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MV POWER MOS
Seri :
OptiMOS™ 5
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A
Drive Voltage (Max Rds Sou, Min RDS Sou) :
8V, 10V
RD sou (Max) @ Id, Vgs :
5.1 mOhm @ 60A, 10V
Vgs (th) (Max) @ Id :
4.6V @ 264µA
Chaje Gate (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
7800pF @ 75V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3
Pake / Ka :
TO-220-3
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