Vishay Semiconductor Diodes Division - UG5HTHE3/45

KEY Part #: K6445610

UG5HTHE3/45 Pricing (USD) [2049PC Stock]

  • 1,000 pcs$0.23671

Nimewo Pati:
UG5HTHE3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 500V 5A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UG5HTHE3/45 electronic components. UG5HTHE3/45 can be shipped within 24 hours after order. If you have any demands for UG5HTHE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG5HTHE3/45 Atribi pwodwi yo

Nimewo Pati : UG5HTHE3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 500V 5A TO220AC
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 500V
Kouran - Mwayèn Rèktifye (Io) : 5A
Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 30µA @ 500V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

Ou ka enterese tou
  • PMEG2010AEK,115

    NXP USA Inc.

    DIODE SCHOTTKY 20V 1A SMT3.

  • BAT54WH6327XTSA1

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT323.

  • IDB45E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 71A TO263-3.

  • IDB15E60

    Infineon Technologies

    DIODE GEN PURP 600V 29.2A TO263. Diodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode

  • IDB09E60ATMA1

    Infineon Technologies

    DIODE GEN PURP 600V 19.3A TO263.

  • VS-80EPS12PBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 1.2KV 80A TO247AC.