Microsemi Corporation - APT80GA90LD40

KEY Part #: K6422237

APT80GA90LD40 Pricing (USD) [6830PC Stock]

  • 1 pcs$6.03371
  • 37 pcs$6.03366

Nimewo Pati:
APT80GA90LD40
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 900V 145A 625W TO-264.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - RF, Tiristors - SCR and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT80GA90LD40 electronic components. APT80GA90LD40 can be shipped within 24 hours after order. If you have any demands for APT80GA90LD40, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT80GA90LD40 Atribi pwodwi yo

Nimewo Pati : APT80GA90LD40
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 900V 145A 625W TO-264
Seri : POWER MOS 8™
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 900V
Kouran - Pèseptè (Ic) (Max) : 145A
Kouran - Pèseptè batman (Icm) : 239A
Vce (sou) (Max) @ Vge, Ic : 3.1V @ 15V, 47A
Pouvwa - Max : 625W
Oblije chanje enèji : 1652µJ (on), 1389µJ (off)
Kalite Antre : Standard
Gate chaje : 200nC
Td (on / off) @ 25 ° C : 18ns/149ns
Kondisyon egzamen an : 600V, 47A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) : 25ns
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake / Ka : TO-264-3, TO-264AA
Pake Aparèy Founisè : TO-264

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