AUIRLL2705TR Pricing (USD) [142854PC Stock]
- 1 pcs$0.25892
- 2,500 pcs$0.23754
- Nimewo Pati:
- AUIRLL2705TR
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 55V 5.2A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Zener - Single, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies AUIRLL2705TR electronic components. AUIRLL2705TR can be shipped within 24 hours after order. If you have any demands for AUIRLL2705TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRLL2705TR Atribi pwodwi yo
Nimewo Pati :
AUIRLL2705TR
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 55V 5.2A SOT223
Seri :
Automotive, AEC-Q101, HEXFET®
Estati Pati :
Not For New Designs
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 10V
RD sou (Max) @ Id, Vgs :
40 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±16V
Antre kapasite (Ciss) (Max) @ Vds :
870pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT223
Pake / Ka :
TO-261-4, TO-261AA
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