IPB35N12S3L26ATMA1 Pricing (USD) [152774PC Stock]
- 1 pcs$0.24211
- 1,000 pcs$0.19747
- Nimewo Pati:
- IPB35N12S3L26ATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CHANNEL100.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Transistors - JFETs, Tiristors - SCR, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPB35N12S3L26ATMA1 electronic components. IPB35N12S3L26ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB35N12S3L26ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB35N12S3L26ATMA1 Atribi pwodwi yo
Nimewo Pati :
IPB35N12S3L26ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CHANNEL100
Seri :
*
Estati Pati :
Active
FET Kalite :
-
Teknoloji :
-
Drenaj nan Voltage Sous (Vdss) :
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Kouran - Drenaj Kontinye (Id) @ 25 ° C :
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Drive Voltage (Max Rds Sou, Min RDS Sou) :
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RD sou (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
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Antre kapasite (Ciss) (Max) @ Vds :
-
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
-
Mounting Kalite :
-
Pake Aparèy Founisè :
-
Pake / Ka :
-
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