AS3BJHM3_A/I Pricing (USD) [519274PC Stock]
- 1 pcs$0.07123
- 6,400 pcs$0.06455
- Nimewo Pati:
- AS3BJHM3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 600V 2A DO214AA. Rectifiers 3A,600V, SMB, Avalanch STD SM RECT
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division AS3BJHM3_A/I electronic components. AS3BJHM3_A/I can be shipped within 24 hours after order. If you have any demands for AS3BJHM3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AS3BJHM3_A/I Atribi pwodwi yo
Nimewo Pati :
AS3BJHM3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 600V 2A DO214AA
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
1.05V @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.5µs
Kouran - Fèy Reverse @ Vr :
20µA @ 600V
Kapasite @ Vr, F :
40pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 175°C
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