Vishay Siliconix - SIHH27N60EF-T1-GE3

KEY Part #: K6417025

SIHH27N60EF-T1-GE3 Pricing (USD) [23347PC Stock]

  • 1 pcs$1.76519

Nimewo Pati:
SIHH27N60EF-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET N-CH 600V 29A POWERPAK8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - RF, Transistors - IGBTs - Arrays, Tiristors - TRIACs and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SIHH27N60EF-T1-GE3 electronic components. SIHH27N60EF-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH27N60EF-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHH27N60EF-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SIHH27N60EF-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET N-CH 600V 29A POWERPAK8
Seri : E
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 135nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2609pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 202W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 8 x 8
Pake / Ka : 8-PowerTDFN

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