Infineon Technologies - AUIRF3710Z

KEY Part #: K6406267

AUIRF3710Z Pricing (USD) [1378PC Stock]

  • 1 pcs$1.33091
  • 10 pcs$1.20179
  • 100 pcs$0.91631

Nimewo Pati:
AUIRF3710Z
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 59A TO220AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Single and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies AUIRF3710Z electronic components. AUIRF3710Z can be shipped within 24 hours after order. If you have any demands for AUIRF3710Z, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AUIRF3710Z Atribi pwodwi yo

Nimewo Pati : AUIRF3710Z
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 59A TO220AB
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 59A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 18 mOhm @ 35A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2900pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 160W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3