Manifakti :
Alpha & Omega Semiconductor Inc.
Deskripsyon :
MOSFET N/P-CH 60V 8DIP
FET Kalite :
N and P-Channel
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
RD sou (Max) @ Id, Vgs :
56 mOhm @ 4.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
10.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
540pF @ 30V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-PDIP