Nimewo Pati :
SI4774DY-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CHANNEL 30V 16A 8SO
Seri :
SkyFET®, TrenchFET®
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
9.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
14.3nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1025pF @ 15V
Karakteristik FET :
Schottky Diode (Body)
Disipasyon Pouvwa (Max) :
5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TA)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)