Infineon Technologies - IPB80P04P407ATMA1

KEY Part #: K6419488

IPB80P04P407ATMA1 Pricing (USD) [114518PC Stock]

  • 1 pcs$0.32298
  • 1,000 pcs$0.30652

Nimewo Pati:
IPB80P04P407ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET P-CH TO263-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB80P04P407ATMA1 Atribi pwodwi yo

Nimewo Pati : IPB80P04P407ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET P-CH TO263-3
Seri : Automotive, AEC-Q101, OptiMOS™
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 7.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 4V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs : 89nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 6085pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 88W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO263-3-2
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB