Infineon Technologies - IRFS4229PBF

KEY Part #: K6408048

IRFS4229PBF Pricing (USD) [762PC Stock]

  • 1 pcs$2.05366
  • 10 pcs$1.83243
  • 100 pcs$1.50270
  • 500 pcs$1.21682
  • 1,000 pcs$0.97360

Nimewo Pati:
IRFS4229PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 250V 45A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFS4229PBF electronic components. IRFS4229PBF can be shipped within 24 hours after order. If you have any demands for IRFS4229PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS4229PBF Atribi pwodwi yo

Nimewo Pati : IRFS4229PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 250V 45A D2PAK
Seri : HEXFET®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 48 mOhm @ 26A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4560pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 330W (Tc)
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB