STGWA8M120DF3 Pricing (USD) [39744PC Stock]
- 1 pcs$0.98381
- Nimewo Pati:
- STGWA8M120DF3
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- IGBT.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STGWA8M120DF3 electronic components. STGWA8M120DF3 can be shipped within 24 hours after order. If you have any demands for STGWA8M120DF3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STGWA8M120DF3 Atribi pwodwi yo
Nimewo Pati :
STGWA8M120DF3
Manifakti :
STMicroelectronics
Deskripsyon :
IGBT
Seri :
M
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
16A
Kouran - Pèseptè batman (Icm) :
32A
Vce (sou) (Max) @ Vge, Ic :
2.3V @ 15V, 8A
Pouvwa - Max :
167W
Oblije chanje enèji :
390µJ (on), 370µJ (Off)
Kalite Antre :
Standard
Gate chaje :
32nC
Td (on / off) @ 25 ° C :
20ns/126ns
Kondisyon egzamen an :
600V, 8A, 33 Ohm, 15V
Ranvèse Tan Reverse (trr) :
103ns
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
TO-247 Long Leads
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