HTNFET-D Pricing (USD) [230PC Stock]
- 1 pcs$214.11918
- Nimewo Pati:
- HTNFET-D
- Manifakti:
- Honeywell Aerospace
- Detaye deskripsyon:
- MOSFET N-CH 55V 8-DIP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Modil pouvwa chofè, Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - JFETs and Tiristors - SCR ...
- Avantaj konpetitif:
- We specialize in Honeywell Aerospace HTNFET-D electronic components. HTNFET-D can be shipped within 24 hours after order. If you have any demands for HTNFET-D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTNFET-D Atribi pwodwi yo
Nimewo Pati :
HTNFET-D
Manifakti :
Honeywell Aerospace
Deskripsyon :
MOSFET N-CH 55V 8-DIP
Seri :
HTMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
55V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
400 mOhm @ 100mA, 5V
Vgs (th) (Max) @ Id :
2.4V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs :
4.3nC @ 5V
Vgs (Max) :
10V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 28V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
50W (Tj)
Operating Tanperati :
-55°C ~ 225°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
8-CDIP-EP
Pake / Ka :
8-CDIP Exposed Pad
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