TSM600P03CS RLG Pricing (USD) [657258PC Stock]
- 1 pcs$0.05628
- Nimewo Pati:
- TSM600P03CS RLG
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- MOSFET P-CHANNEL 30V 4.7A 8SOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation TSM600P03CS RLG electronic components. TSM600P03CS RLG can be shipped within 24 hours after order. If you have any demands for TSM600P03CS RLG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM600P03CS RLG Atribi pwodwi yo
Nimewo Pati :
TSM600P03CS RLG
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
MOSFET P-CHANNEL 30V 4.7A 8SOP
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
60 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
9.6nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
560pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SOP
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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