Microsemi Corporation - APT54GA60BD30

KEY Part #: K6422300

APT54GA60BD30 Pricing (USD) [11700PC Stock]

  • 1 pcs$3.52198
  • 69 pcs$3.52196

Nimewo Pati:
APT54GA60BD30
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 600V 96A 416W TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Tiristors - SCR - Modil yo and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT54GA60BD30 electronic components. APT54GA60BD30 can be shipped within 24 hours after order. If you have any demands for APT54GA60BD30, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT54GA60BD30 Atribi pwodwi yo

Nimewo Pati : APT54GA60BD30
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 600V 96A 416W TO247
Seri : -
Estati Pati : Active
Kalite IGBT : PT
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 96A
Kouran - Pèseptè batman (Icm) : 161A
Vce (sou) (Max) @ Vge, Ic : 2.5V @ 15V, 32A
Pouvwa - Max : 416W
Oblije chanje enèji : 534µJ (on), 466µJ (off)
Kalite Antre : Standard
Gate chaje : 28nC
Td (on / off) @ 25 ° C : 17ns/112ns
Kondisyon egzamen an : 400V, 32A, 4.7 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247 [B]

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