Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 3N/3P-CH 30V 3A SO16
FET Kalite :
3 N and 3 P-Channel (3-Phase Bridge)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A
RD sou (Max) @ Id, Vgs :
90 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
360pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
16-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
16-SOIC