[2472PC Stock]
- Nimewo Pati:
- PMPB20UN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 6.6A 6DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMPB20UN,115 electronic components. PMPB20UN,115 can be shipped within 24 hours after order. If you have any demands for PMPB20UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB20UN,115 Atribi pwodwi yo
Nimewo Pati :
PMPB20UN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 20V 6.6A 6DFN
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
6.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 6.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.1nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
460pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.7W (Ta), 12.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-DFN2020MD (2x2)
Pake / Ka :
6-UDFN Exposed Pad
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