ON Semiconductor - NGTB25N120IHLWG

KEY Part #: K6424814

NGTB25N120IHLWG Pricing (USD) [30561PC Stock]

  • 1 pcs$1.34854
  • 10 pcs$1.21148
  • 100 pcs$0.94169
  • 500 pcs$0.80162
  • 1,000 pcs$0.67607

Nimewo Pati:
NGTB25N120IHLWG
Manifakti:
ON Semiconductor
Detaye deskripsyon:
IGBT 1200V 50A 192W TO247-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in ON Semiconductor NGTB25N120IHLWG electronic components. NGTB25N120IHLWG can be shipped within 24 hours after order. If you have any demands for NGTB25N120IHLWG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB25N120IHLWG Atribi pwodwi yo

Nimewo Pati : NGTB25N120IHLWG
Manifakti : ON Semiconductor
Deskripsyon : IGBT 1200V 50A 192W TO247-3
Seri : -
Estati Pati : Last Time Buy
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 50A
Kouran - Pèseptè batman (Icm) : 200A
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 25A
Pouvwa - Max : 192W
Oblije chanje enèji : 800µJ (off)
Kalite Antre : Standard
Gate chaje : 200nC
Td (on / off) @ 25 ° C : -/235ns
Kondisyon egzamen an : 600V, 25A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-247-3
Pake Aparèy Founisè : TO-247