MMIX1F180N25T Pricing (USD) [2882PC Stock]
- 1 pcs$16.61017
- 20 pcs$16.52753
- Nimewo Pati:
- MMIX1F180N25T
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 250V 130A SMPD.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in IXYS MMIX1F180N25T electronic components. MMIX1F180N25T can be shipped within 24 hours after order. If you have any demands for MMIX1F180N25T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MMIX1F180N25T Atribi pwodwi yo
Nimewo Pati :
MMIX1F180N25T
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 250V 130A SMPD
Seri :
GigaMOS™, HiperFET™, TrenchT2™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
132A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
13 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
5V @ 8mA
Chaje Gate (Qg) (Max) @ Vgs :
364nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
23800pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
570W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
24-SMPD
Pake / Ka :
24-PowerSMD, 21 Leads
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