Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 50V 45A TO-3PN
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
50V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
45A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
20 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
68nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2300pF @ 10V
Disipasyon Pouvwa (Max) :
125W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-3P(N)
Pake / Ka :
TO-3P-3, SC-65-3