ON Semiconductor - FDMS3600AS

KEY Part #: K6521902

FDMS3600AS Pricing (USD) [114088PC Stock]

  • 1 pcs$0.32582
  • 3,000 pcs$0.32420

Nimewo Pati:
FDMS3600AS
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET 2N-CH 25V 15A/30A 8-PQFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDMS3600AS electronic components. FDMS3600AS can be shipped within 24 hours after order. If you have any demands for FDMS3600AS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMS3600AS Atribi pwodwi yo

Nimewo Pati : FDMS3600AS
Manifakti : ON Semiconductor
Deskripsyon : MOSFET 2N-CH 25V 15A/30A 8-PQFN
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Asymmetrical
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A, 30A
RD sou (Max) @ Id, Vgs : 5.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.7V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 27nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 1770pF @ 13V
Pouvwa - Max : 2.2W, 2.5W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-PowerTDFN
Pake Aparèy Founisè : Power56