IXTL2N470 Pricing (USD) [1337PC Stock]
- 1 pcs$32.36428
- Nimewo Pati:
- IXTL2N470
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Diodes - Zener - Single, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTL2N470 electronic components. IXTL2N470 can be shipped within 24 hours after order. If you have any demands for IXTL2N470, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTL2N470 Atribi pwodwi yo
Nimewo Pati :
IXTL2N470
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
4700V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
20 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
6860pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
220W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ISOPLUSi5-Pak™
Pake / Ka :
ISOPLUSi5-Pak™
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