IXYS - IXFY8N65X2

KEY Part #: K6395651

IXFY8N65X2 Pricing (USD) [46760PC Stock]

  • 1 pcs$0.83620

Nimewo Pati:
IXFY8N65X2
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur, Diodes - RF, Transistors - IGBTs - Single, Tiristors - TRIACs and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in IXYS IXFY8N65X2 electronic components. IXFY8N65X2 can be shipped within 24 hours after order. If you have any demands for IXFY8N65X2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFY8N65X2 Atribi pwodwi yo

Nimewo Pati : IXFY8N65X2
Manifakti : IXYS
Deskripsyon : MOSFET N-CH
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 450 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 790pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 150W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-252AA
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63