Manifakti :
Texas Instruments
Deskripsyon :
8V P-CHANNEL FEMTOFET
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
5.7 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1.05V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
14.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2275pF @ 4V
Disipasyon Pouvwa (Max) :
1.7W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
9-DSBGA (1.5x1.5)
Pake / Ka :
9-UFBGA, DSBGA