Nimewo Pati :
GI828-E3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 800V 5A P600
Voltage - DC Ranvèse (Vr) (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
5A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
200ns
Kouran - Fèy Reverse @ Vr :
10µA @ 800V
Kapasite @ Vr, F :
300pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
P600
Operating Tanperati - Junction :
-50°C ~ 150°C