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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. NDT02N40T1G

ON Semiconductor - NDT02N40T1G

KEY Part #: K6401820

NDT02N40T1G Pricing (USD) [2918PC Stock]

  • 3,000 pcs$0.08766
Nimewo Pati:
NDT02N40T1G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 400V 0.4A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Transistors - Objektif espesyal, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor NDT02N40T1G electronic components. NDT02N40T1G can be shipped within 24 hours after order. If you have any demands for NDT02N40T1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NDT02N40T1G Atribi pwodwi yo

Nimewo Pati : NDT02N40T1G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 400V 0.4A SOT223
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 400V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 400mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 5.5 Ohm @ 220mA, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 5.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 121pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Tc)
Operating Tanperati : -
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223 (TO-261)
Pake / Ka : TO-261-4, TO-261AA

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