DMN2250UFB-7B Pricing (USD) [1272399PC Stock]
- 1 pcs$0.02907
- Nimewo Pati:
- DMN2250UFB-7B
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 1.35A 3DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2250UFB-7B electronic components. DMN2250UFB-7B can be shipped within 24 hours after order. If you have any demands for DMN2250UFB-7B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2250UFB-7B Atribi pwodwi yo
Nimewo Pati :
DMN2250UFB-7B
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 1.35A 3DFN
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.35A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
170 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.1nC @ 10V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
94pF @ 16V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
500mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
X1-DFN1006-3
Pake / Ka :
3-UFDFN
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