[1591PC Stock]
- Nimewo Pati:
- TK16A55D(STA4,Q,M)
- Manifakti:
- Toshiba Semiconductor and Storage
- Detaye deskripsyon:
- MOSFET N-CH 550V 16A TO-220SIS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Toshiba Semiconductor and Storage TK16A55D(STA4,Q,M) electronic components. TK16A55D(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK16A55D(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK16A55D(STA4,Q,M) Atribi pwodwi yo
Nimewo Pati :
TK16A55D(STA4,Q,M)
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 550V 16A TO-220SIS
Seri :
π-MOSVII
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
330 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
2600pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
-
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
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