[2719PC Stock]
- Nimewo Pati:
- N0439N-S19-AY
- Manifakti:
- Renesas Electronics America
- Detaye deskripsyon:
- MOSFET N-CH 40V 100A.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR - Modil yo, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Renesas Electronics America N0439N-S19-AY electronic components. N0439N-S19-AY can be shipped within 24 hours after order. If you have any demands for N0439N-S19-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
N0439N-S19-AY Atribi pwodwi yo
Nimewo Pati :
N0439N-S19-AY
Manifakti :
Renesas Electronics America
Deskripsyon :
MOSFET N-CH 40V 100A
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
90A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
3.3 mOhm @ 45A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
102nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5850pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.8W (Ta), 147W (Tc)
Operating Tanperati :
175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220
Pake / Ka :
TO-220-3
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