[13000PC Stock]
- Nimewo Pati:
- IRF6648TR1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 60V 86A DIRECTFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRF6648TR1 electronic components. IRF6648TR1 can be shipped within 24 hours after order. If you have any demands for IRF6648TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6648TR1 Atribi pwodwi yo
Nimewo Pati :
IRF6648TR1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 60V 86A DIRECTFET
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
86A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7 mOhm @ 17A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2120pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 89W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DIRECTFET™ MN
Pake / Ka :
DirectFET™ Isometric MN
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