Infineon Technologies - IPP65R190CFDAAKSA1

KEY Part #: K6417639

IPP65R190CFDAAKSA1 Pricing (USD) [37177PC Stock]

  • 1 pcs$1.05173
  • 500 pcs$1.03737

Nimewo Pati:
IPP65R190CFDAAKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 650V TO-220-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP65R190CFDAAKSA1 Atribi pwodwi yo

Nimewo Pati : IPP65R190CFDAAKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 650V TO-220-3
Seri : Automotive, AEC-Q101, CoolMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 700µA
Chaje Gate (Qg) (Max) @ Vgs : 68nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1850pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 151W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3
Pake / Ka : TO-220-3