IRFHM8337TRPBF Pricing (USD) [335200PC Stock]
- 1 pcs$0.11034
- 4,000 pcs$0.09462
- Nimewo Pati:
- IRFHM8337TRPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 12A 8PQFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Rèkteur - Arrays, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFHM8337TRPBF electronic components. IRFHM8337TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8337TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8337TRPBF Atribi pwodwi yo
Nimewo Pati :
IRFHM8337TRPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 12A 8PQFN
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
12.4 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Chaje Gate (Qg) (Max) @ Vgs :
8.1nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
755pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.8W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-PQFN (3.3x3.3), Power33
Pake / Ka :
8-PowerTDFN
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