STS3P6F6 Pricing (USD) [1593PC Stock]
- 2,500 pcs$0.16749
- Nimewo Pati:
- STS3P6F6
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET P-CH 60V 3A 8SOIC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Single ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics STS3P6F6 electronic components. STS3P6F6 can be shipped within 24 hours after order. If you have any demands for STS3P6F6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STS3P6F6 Atribi pwodwi yo
Nimewo Pati :
STS3P6F6
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET P-CH 60V 3A 8SOIC
Seri :
DeepGATE™, STripFET™ VI
Estati Pati :
Obsolete
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
-
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
160 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
340pF @ 48V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2.7W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-SO
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
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