Diodes Incorporated - DMN2400UFDQ-7

KEY Part #: K6402322

DMN2400UFDQ-7 Pricing (USD) [2744PC Stock]

  • 3,000 pcs$0.04424

Nimewo Pati:
DMN2400UFDQ-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 20V 0.9A DFN1212-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Zener - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2400UFDQ-7 Atribi pwodwi yo

Nimewo Pati : DMN2400UFDQ-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 20V 0.9A DFN1212-3
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 900mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 600 mOhm @ 200mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 0.5nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 37pF @ 16V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 400mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : U-DFN1212-3 (Type C)
Pake / Ka : 3-PowerUDFN