Infineon Technologies - IPG15N06S3L-45

KEY Part #: K6524129

[3934PC Stock]


    Nimewo Pati:
    IPG15N06S3L-45
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET 2N-CH 55V 15A TDSON-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IPG15N06S3L-45 electronic components. IPG15N06S3L-45 can be shipped within 24 hours after order. If you have any demands for IPG15N06S3L-45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPG15N06S3L-45 Atribi pwodwi yo

    Nimewo Pati : IPG15N06S3L-45
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET 2N-CH 55V 15A TDSON-8
    Seri : OptiMOS™
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15A
    RD sou (Max) @ Id, Vgs : 45 mOhm @ 10A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 10µA
    Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
    Antre kapasite (Ciss) (Max) @ Vds : 1420pF @ 25V
    Pouvwa - Max : 21W
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-PowerVDFN
    Pake Aparèy Founisè : PG-TDSON-8-4