Vishay Siliconix - SI7911DN-T1-GE3

KEY Part #: K6524074

[4654PC Stock]


    Nimewo Pati:
    SI7911DN-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET 2P-CH 20V 4.2A 1212-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single, Diodes - Rèkteur - Single, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Tiristors - SCR, Transistors - JFETs and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI7911DN-T1-GE3 electronic components. SI7911DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7911DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI7911DN-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI7911DN-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET 2P-CH 20V 4.2A 1212-8
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : 2 P-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.2A
    RD sou (Max) @ Id, Vgs : 51 mOhm @ 5.7A, 4.5V
    Vgs (th) (Max) @ Id : 1V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Pouvwa - Max : 1.3W
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : PowerPAK® 1212-8 Dual
    Pake Aparèy Founisè : PowerPAK® 1212-8 Dual

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