Nimewo Pati :
SSM6P35FE,LM
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2NCH 20V 100MA ES6
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100mA
RD sou (Max) @ Id, Vgs :
8 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id :
1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
-
Antre kapasite (Ciss) (Max) @ Vds :
12.2pF @ 3V
Operating Tanperati :
150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
SOT-563, SOT-666
Pake Aparèy Founisè :
ES6