Toshiba Semiconductor and Storage - SSM6P35FE,LM

KEY Part #: K6523601

SSM6P35FE,LM Pricing (USD) [4110PC Stock]

  • 4,000 pcs$0.03393

Nimewo Pati:
SSM6P35FE,LM
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET 2NCH 20V 100MA ES6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Zener - Single, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Transistors - IGBTs - Single, Tiristors - SCR and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage SSM6P35FE,LM electronic components. SSM6P35FE,LM can be shipped within 24 hours after order. If you have any demands for SSM6P35FE,LM, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6P35FE,LM Atribi pwodwi yo

Nimewo Pati : SSM6P35FE,LM
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET 2NCH 20V 100MA ES6
Seri : -
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100mA
RD sou (Max) @ Id, Vgs : 8 Ohm @ 50mA, 4V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 12.2pF @ 3V
Pouvwa - Max : 150mW
Operating Tanperati : 150°C
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6

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