BSZ0909NDXTMA1 Pricing (USD) [181450PC Stock]
- 1 pcs$0.20384
- 5,000 pcs$0.18695
- Nimewo Pati:
- BSZ0909NDXTMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET 2 N-CH 30V 20A WISON-8.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies BSZ0909NDXTMA1 electronic components. BSZ0909NDXTMA1 can be shipped within 24 hours after order. If you have any demands for BSZ0909NDXTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ0909NDXTMA1 Atribi pwodwi yo
Nimewo Pati :
BSZ0909NDXTMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET 2 N-CH 30V 20A WISON-8
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate, 4.5V Drive
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
20A (Tc)
RD sou (Max) @ Id, Vgs :
18 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
2.6nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
360pF @ 15V
Pouvwa - Max :
17W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-PowerVDFN
Pake Aparèy Founisè :
PG-WISON-8
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