Nimewo Pati :
SIZ700DT-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET 2N-CH 20V 16A PPAK 1212-8
FET Kalite :
2 N-Channel (Half Bridge)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
16A
RD sou (Max) @ Id, Vgs :
8.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1300pF @ 10V
Pouvwa - Max :
2.36W, 2.8W
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-PowerPair™