Nimewo Pati :
TPC8213-H(TE12LQ,M
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET 2N-CH 60V 5A SOP8
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5A
RD sou (Max) @ Id, Vgs :
50 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
11nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
625pF @ 10V
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.173", 4.40mm Width)
Pake Aparèy Founisè :
8-SOP (5.5x6.0)