Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N/P-CH 20V 3A/2.5A 8-SOIC
FET Kalite :
N and P-Channel
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A, 2.5A
RD sou (Max) @ Id, Vgs :
125 mOhm @ 1A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
25nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
300pF @ 15V
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO