Nimewo Pati :
APTM100VDA35T3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOSFET 2N-CH 1000V 22A SP3
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
1000V (1kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
22A
RD sou (Max) @ Id, Vgs :
420 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs :
186nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
5200pF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3