Vishay Siliconix - SI7872DP-T1-GE3

KEY Part #: K6524073

SI7872DP-T1-GE3 Pricing (USD) [3953PC Stock]

  • 3,000 pcs$0.42841

Nimewo Pati:
SI7872DP-T1-GE3
Manifakti:
Vishay Siliconix
Detaye deskripsyon:
MOSFET 2N-CH 30V 6.4A PPAK SO-8.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Tiristors - SCR, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Modil yo and Modil pouvwa chofè ...
Avantaj konpetitif:
We specialize in Vishay Siliconix SI7872DP-T1-GE3 electronic components. SI7872DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7872DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7872DP-T1-GE3 Atribi pwodwi yo

Nimewo Pati : SI7872DP-T1-GE3
Manifakti : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 30V 6.4A PPAK SO-8
Seri : LITTLE FOOT®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.4A
RD sou (Max) @ Id, Vgs : 22 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 1.4W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual