Nimewo Pati :
IPP50R199CPHKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 550V TO-220
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
17A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 660µA
Chaje Gate (Qg) (Max) @ Vgs :
45nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
1800pF @ 100V
Disipasyon Pouvwa (Max) :
139W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3-1