Infineon Technologies - IPP50R199CPHKSA1

KEY Part #: K6417927

IPP50R199CPHKSA1 Pricing (USD) [46353PC Stock]

  • 1 pcs$0.84353
  • 500 pcs$0.80613

Nimewo Pati:
IPP50R199CPHKSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 550V TO-220.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays and Tiristors - TRIACs ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP50R199CPHKSA1 Atribi pwodwi yo

Nimewo Pati : IPP50R199CPHKSA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 550V TO-220
Seri : CoolMOS™
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 550V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 199 mOhm @ 9.9A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 660µA
Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1800pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 139W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PG-TO220-3-1
Pake / Ka : TO-220-3

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